Mobility calculation for small band gap semiconductor

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umklapp
Posts: 5
Joined: Mon Jan 21, 2019 3:53 am
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Mobility calculation for small band gap semiconductor

Post by umklapp »

Dear all,
To calculate the carrier mobility for small band gap semiconductors with free carriers (1E20), I tried a few scissor-shifts to increase the gap. However, I am always getting the following errors, for example,

Valence band maximum = 7.468149 eV
Conduction band minimum = 8.055196 eV
Warning: too many iterations in bisection
Ef = 0.000000
Mobility VB Fermi level 0.000000 eV

Valence band maximum = 7.468149 eV
Conduction band minimum = 8.055196 eV
Warning: too many iterations in bisection
Ef = 0.000000
Mobility CB Fermi level 0.000000 eV


Any suggestions to avoid this error are greatly appreciated!
Best,
Sai
roxana
Posts: 172
Joined: Fri Jan 22, 2016 6:48 pm
Affiliation:

Re: Mobility calculation for small band gap semiconductor

Post by roxana »

Hi,

If you know where the Fermi level should be located you can provided in the input file through the flag fermi_energy.

Best,
Roxana
Roxana Margine
Associate Professor
Department of Physics, Applied Physics and Astronomy
Binghamton University, State University of New York
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