Dear all,
To calculate the carrier mobility for small band gap semiconductors with free carriers (1E20), I tried a few scissor-shifts to increase the gap. However, I am always getting the following errors, for example,
Valence band maximum = 7.468149 eV
Conduction band minimum = 8.055196 eV
Warning: too many iterations in bisection
Ef = 0.000000
Mobility VB Fermi level 0.000000 eV
Valence band maximum = 7.468149 eV
Conduction band minimum = 8.055196 eV
Warning: too many iterations in bisection
Ef = 0.000000
Mobility CB Fermi level 0.000000 eV
Any suggestions to avoid this error are greatly appreciated!
Best,
Sai
Mobility calculation for small band gap semiconductor
Moderator: stiwari
Re: Mobility calculation for small band gap semiconductor
Hi,
If you know where the Fermi level should be located you can provided in the input file through the flag fermi_energy.
Best,
Roxana
If you know where the Fermi level should be located you can provided in the input file through the flag fermi_energy.
Best,
Roxana
Roxana Margine
Associate Professor
Department of Physics, Applied Physics and Astronomy
Binghamton University, State University of New York
Associate Professor
Department of Physics, Applied Physics and Astronomy
Binghamton University, State University of New York